| PART |
Description |
Maker |
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1201WR BF1201R BF1201 BF1201-15 BF1201-2015 |
N-channel dual-gate PoLo MOS-FETs
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BF1109WR BF1109R BF1109 BF1109_R_WR_2 |
N-channel dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| BF904 BF904R BF90407 BF904-2015 |
N-channel dual gate MOS-FETs
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| BF1102R BF1102 BF110200 BF1102-15 BF1102-2015 |
Dual N-channel dual gate MOS-FETs
|
NXP Semiconductors
Philips
Quanzhou Jinmei Electro...
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 2SK0665 2SK665 |
Silicon MOS FETs
From old datasheet system
Small-signal device - Small-signal FETs - MOS FETs
|
Panasonic Semiconductor
|
| BF992 BF992-2015 BF992-15 |
Silicon N-channel dual gate MOS-FET
N-channel dual-gate MOSFET
|
Quanzhou Jinmei Electro...
NXP Semiconductors
Quanzhou Jinmei Electronic ...
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
